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Product Data Sheet
2 - 20 GHz Gain Block Amplifier
TGA8622-SCC
Key Features and Performance
* * * * * * 2 to 20 GHz Frequency Range 7.5 dB Gain with Greater than 30dB Gain-Control Capability 20 dBm Output Power at 1 dB Gain Compression 7 dB Noise Figure Input and Output SWR 1.7:1 Midband 2.769 x 2.159 x 0.152 mm (0.109 x 0.085 x 0.006 in.)
Description
The TriQuint TGA8622-SCC is a broadband general-purpose amplifier that operates over the 2 to 20 GHz frequency range. Six 200um dual-gate FETs provide the amplifier with a typical gain of 7.5 dB. Midband input and output SWRs are typically 1.7:1. This amplifier is directly cascadable and can be used in both gain control and active temperature compensation applications. Ground is provided to the circuitry through vias to the backside metallization. The TGA8622-SCC is available in chip form and is readily assembled using automated equipment. The device bond pads and backside are gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGA8622-SCC
TYPICAL SMALL-SIGNAL POWER GAIN Gp vs. VCTRL
VCTRL for particular gain levels is shown for reference only and may vary from device to device.
TYPICAL NOISE FIGURE NF vs. VCTRL
TYPICAL OUTPUT POWER P1dB vs. VCTRL
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGA8622-SCC
TYPICAL RETURN LOSS
ABSOLUTE MAXIMUM RATINGS
Positive supply voltage, V+..............................................................................................8 V Positive supply voltage range w ith respect to negative supply voltage, V+ - V-...........................0 V to 12 V Negative supply voltage range, V-.................................................................................... 0 V to -5 V Gain control voltage range, V CTRL....................................................................................... V to 4 V -5 Gain control voltage range w ith respect to positive supply voltage, V CTRL.................................. 0 V to -10 V Positive supply current, I+................................................................................................370 mA Pow er dissipation, PD, at (or below ) 25oC base-plate temperature *.......................................... 2.9 W Operating Channel temperature, TCH **................................................................................. oC 150 Mounting temperature (30 sec.), TM....................................................................................320oC Storage temperature range, TSTG.......................................................................................-65 to 150oC Ratings over operating channel temperature range, TCH (unless otherw ise noted). Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. * For operation above 25oC base-plate temperature, derate linearly at the rate of 6.1 mW/oC. ** Operating channel temperature (TCH) w ill directly affect the device MTTF. For maximum life, it is recommended that channel temperature be maintained at the low est possible level.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
3
Product Data Sheet TGA8622-SCC
TYPICAL S-PARAMETERS
F re que nc y (GHz) M AG
S 11 ANG() M AG
S 21 ANG() M AG
S 12 ANG() M AG
S 22 ANG()
GAIN (dB)
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0
0.18 0.14 0.10 0.07 0.09 0.12 0.14 0.16 0.17 0.18 0.17 0.14 0.12 0.09 0.09 0.12 0.17 0.22 0.26 0.27 0.26 0.24 0.23 0.22 0.21 0.22 0.25 0.26 0.26 0.26 0.26 0.28 0.33 0.33 0.36 0.38 0.40
168 150 148 175 -160 -153 -158 -166 -177 172 163 159 159 166 -174 -161 -157 -157 -160 -162 -165 -169 -174 -178 -175 -169 -164 -162 -162 -166 -170 -172 -174 -174 -169 -167 -164
2.34 2.55 2.62 2.66 2.64 2.61 2.57 2.54 2.49 2.47 2.46 2.46 2.44 2.43 2.42 2.41 2.40 2.38 2.36 2.35 2.35 2.38 2.36 2.35 2.38 2.38 2.38 2.39 2.36 2.31 2.33 2.31 2.22 2.19 2.21 2.29 2.28
128 108 87 66 46 26 7 -12 -30 -48 -66 -84 -103 -121 -139 -158 -177 165 147 128 110 91 71 53 33 12 -8 -29 -51 -72 -93 -116 -138 -159 179 155 125
0.007 0.011 0.013 0.014 0.014 0.014 0.014 0.015 0.015 0.016 0.016 0.018 0.020 0.021 0.023 0.024 0.025 0.026 0.026 0.026 0.025 0.025 0.025 0.025 0.025 0.027 0.028 0.030 0.031 0.033 0.036 0.038 0.035 0.037 0.042 0.041 0.040
81 59 37 16 -5 -24 -37 -61 -81 -99 -118 -136 -155 -172 171 155 139 124 108 91 77 61 44 25 4 -18 -41 -62 -84 -104 -125 -146 -166 -174 163 140 119
0.08 0.15 0.17 0.19 0.19 0.18 0.17 0.14 0.11 0.07 0.08 0.11 0.15 0.17 0.18 0.17 0.16 0.15 0.13 0.12 0.13 0.14 0.17 0.17 0.14 0.10 0.06 0.02 0.07 0.13 0.19 0.25 0.31 0.36 0.37 0.29 0.28
55 -33 -81 -116 -143 -165 176 160 152 163 -166 -149 -149 -152 -153 -157 -160 -165 -167 -167 -167 -172 172 144 120 100 80 2 -122 -151 -175 159 133 114 98 95 133
7.4 8.1 8.4 8.5 8.4 8.3 8.2 8.1 7.9 7.8 7.8 7.8 7.8 7.7 7.7 7.7 7.6 7.5 7.4 7.4 7.4 7.5 7.5 7.4 7.5 7.5 7.5 7.6 7.5 7.3 7.3 7.3 6.9 6.8 6.9 7.2 7.1
TA = 25oC, V+ = 6 V, VCTRL = 1.5 V, I+ = 50% IDSS The reference planes for S-parameter data include bond wires as specified in the equivalent schematic. The S-parameters are also available on floppy disk and the world wide web.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGA8622-SCC
RF CHARACTERISTICS
P AR AM ETER
TES T C ONDITIONS
TYP
UNIT
GP SWR (in)
Sma ll-s igna l pow e r ga in Input s ta nding w a ve ra tio
f = 2 to 20 GHz f = 2 to 10 GHz f = 10 to 20 GHz f f f f f f f f = 2 to 10 GHz = 10 to 20 GHz = 2 to 18 GHz = 18 to 20 GHz = 2 to 20 GHz = 2 GHz = 10 GHz = 18 GHz
7.5 1.3:1 1.7:1 1.3:1 1.7:1 20 17 7 33 33 30
dB dBm dB dBm
SWR (out) Output s ta nding w a ve ra tio P 1dB NF IP 3 Output pow e r a t 1-dB ga in c ompre s s ion Nois e figure Output third-orde r inte rc e pt point
TA = 25oC, V+ = 6 V, VCTRL = 1.5 V, I+ = 50% IDSS
DC CHARACTERISTICS
P AR AM ETER
TES T C ONDITIONS
M IN M AX UNIT
IDS S
Ze ro-ga te -voltage dra in current at s a tura tion V DS = 0.5 V to 3.5 V, V GS = 0 V 156 444
mA
TA = 25oC VDS for IDSS is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC Autoprobe.
EQUIVALENT SCHEMATIC
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
5
Product Data Sheet TGA8622-SCC
6V RECOMMENDED BIAS CIRCUIT
RF connections: Bond using two 1.0-mil diameter, 20-mil-length gold bond wires at both RF Input and RF Output. Measuring IDSS: Set V-, V+, and VCTRL to 0 V. Connect VCTRL to V+. Short V- to ground. Increase V+, VCTRL from 0 V and measure I+ maximum for V+, VCTRL TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
6
Product Data Sheet TGA8622-SCC
MECHANICAL DRAWING
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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